SCS222DSTL 0.1a , 80v plastic-encapsulated switching diode elektronische bauelemente 21-jul-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a b f g j h k e d d c l rohs compliant product a suffix of -c specifies halogen & lead-free description epitaxial planar silicon diode features high speed. (t rr =1.5ns typ.) suitable for high packing density layout high reliability. applications ultra high speed switching for portable equipment:(i.e. mobile phone,mp3, md ,cd-rom, dvd-rom, note book pc, etc.) marking n package information package mpq leader size wbfbp-03d 5k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameters symbol rating unit peak repetitive reverse voltage v rm 80 v dc reverse voltage v r 80 v forward continuous current i fm 300 ma average rectified output current i o 100 ma power dissipation p d 100 mw operating junction and storage temperature t j, t stg 150, -65~150 c electrical characteristics (t a =25c unless otherwise specified) parameters symbol min. max. unit test conditions reverse breakdown voltage v (br) 80 - v i r =100 a maximum dc reverse current at rated dc blocking voltage i r - 0.1 a v r =70v forward voltage v f - 1.2 v i f =100ma diode capacitance c d - 3.5 pf v r =6v, f=1mhz maximum reverse recovery time t rr - 4 ns v r =6v, i f =5ma wbfbp-03d ref. millimeter ref. millimeter min. max. min. max. a 0.950 1.05 0 g - 0. 0 5 0 b 0.950 1.050 h 0. 510 0. 610 c 0. 010 0. 07 0 j 0.2 5 0 0.35 0 d 0.210 0.310 k - 0.050 e 0.350 ref. l 0.450 0.550 f 0.680 ref. top view
SCS222DSTL 0.1a , 80v plastic-encapsulated switching diode elektronische bauelemente 21-jul-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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